Title :
High-efficiency InP-based HEMT MMIC power amplifier
Author :
Kurdoghlian, A. ; Lam, W. ; Chou, C. ; Jellian, L. ; Igawa, A. ; Matloubian, M. ; Larson, L. ; Brown, A. ; Thompson, M. ; Ngo, C.
Author_Institution :
Hughes Microelectron. Div., Torrance, CA, USA
Abstract :
High-efficiency monolithic Q-band power amplifiers were developed using InP based HEMT MMIC technology. The amplifiers demonstrated state-of-the-art power performance including 33% power-added efficiency and 26 dBm of output power at 44 GHz. This is the highest output power reported with such a high efficiency for InP-based HEMT MMIC power amplifiers at Q-bands. The intended application is communication terminals.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; indium compounds; millimetre wave amplifiers; power HEMT; power amplifiers; 33 percent; 44 GHz; HEMT MMIC power amplifier; III-V semiconductor; InP; MIMIC; Q-band; communication terminals; high efficiency; power-added efficiency; Circuits; HEMTs; High power amplifiers; Indium phosphide; MMICs; Metallization; Power amplifiers; Power generation; Power transmission lines; Radiofrequency amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394430
