Device design for a raised extrinsic base SiGe bipolar technology

This paper describes a systematic 2-D simulation study with ISE TCAD in which the SIC has been investigated through a design of experiments (DOE). A central composite response surface design was used to model the effect of the SIC width (W_SIC), and emitter width (W_E) on the AC and DC performance of a HBT with a raised extrinsic base. In addition to the device simulations, Monte Carlo process simulations of the SIC implantation showed that for smaller W_E values the lateral straggle has a larger relative impact on the final SIC profile. This vertical profile design was used to obtain high f_T and f_MAX values comparable to demonstrated state of the art HBTs.