Power HBT for 44 GHz operation

Author

Deakin, D. ; Ho, W. ; Sovero, E. ; Higgins, J.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

371

Lastpage

373

Abstract

The GaAs based heterojunction bipolar transistor (HBT) has been evaluated as an amplifying device at 44 GHz. The device type measured is essentially identical to that used for power MMICs between 4 and 20 GHz. No ultra fine lithography, no special layer systems were necessary for these devices to provide excellent performance at 44 GHz. Power added efficiencies of 30% at power outputs of 250 mW and small signal gains of over 10 dB are reported. These performance levels are demonstrated by devices obtained from a high yield potentially low cost process.<>

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; millimetre wave power transistors; power bipolar transistors; 250 mW; 30 percent; 44 GHz; GaAs; III-V semiconductor; MM wave device; high yield; low cost process; power HBT; power added efficiency; power amplifier; power outputs; small signal gains; Capacitance; Costs; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Lithography; MMICs; Microwave devices; Power measurement; Production;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394431

Filename

394431