Title :
Reliability of Nano-Meter Thick Multi-Layer Dielectric Films on Poly-Crystalline Silicon
Author :
Ohji, Y. ; Kusaka, T. ; Yoshida, I. ; Hiraiwa, A. ; Yagi, K. ; Mukai, K. ; Kasahara, O.
Author_Institution :
CENTRAL RESEARCH LABORATORY, HITACHI, Ltd., KOKUBUNJI, TOKYO 185, JAPAN. (0423)-23-1111
Abstract :
A guiding principle of designing double layer dielectric film (SiO2/Si3N4) on poly-Si was established in order to scale down VLSIs. The oxidation of Si3N4 reduces leakage current and defect density. The double layer dielectric film with thinner top oxide layer is harder to breakdown. Hence, the thickness of the top oxide layer must be reduced in order to increase the reliability of double layer dielectrics. The perimeter edge of patterned poly-Si electrode has no affect on the reliability of double-layer dielectric films. As a result. the SiO2/Si3N4 was confirmed to be a high reliable nano-meter thick dielectrics on poly-Si.
Keywords :
Capacitors; Crystallization; Dielectric films; Dielectric thin films; Electrodes; Leakage current; Oxidation; Semiconductor films; Silicon; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1987.362155
