DocumentCode :
2615252
Title :
First principles computer model showing the effect of p-layer thickness and front contact barrier height on the performance of a-Si:H p-i-n solar cells
Author :
Arch, J.K. ; Rubinelli, F.A. ; Hou, J.Y. ; Fonash, S.J.
Author_Institution :
Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
1636
Abstract :
The performance of a-Si:H p-i-n solar cells with different p-layer thicknesses, front contact barrier heights, and front contact/p-layer hole transport mechanisms were modeled. The authors examined how p-layer material and contact quality influenced the results obtained, and they also explored the role that tunneling of holes across the barrier near the front contact can play in determining cell performance. It was found that, for active p-layer cells with the optimistic p-layer activation energy of 0.27 eV, cell performance is maximum for a p-layer thickness of about 100 Å. However, this maximum depends on the quality of the p-layer. Surprisingly, it was found that, for front contact barrier height values less than some critical value, cell performance, in the absence of tunneling, depends on the front contact barrier height regardless of the thickness or quality of the p-layer
Keywords :
amorphous semiconductors; carrier mobility; electronic engineering computing; elemental semiconductors; hydrogen; semiconductor device models; silicon; solar cells; activation energy; amorphous Si:H solar cells; cell performance; contact quality; front contact barrier height; hole transport mechanisms; mobility gap; optical gap; p-i-n solar cells; p-layer thickness; Charge carrier processes; Density measurement; Doping; Energy measurement; Helium; Optical devices; Optical sensors; PIN photodiodes; Tail; Ultraviolet sources;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111886
Filename :
111886
Link To Document :
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