DocumentCode
2615273
Title
High performance wide-band and medium-band power amplifier MMICs
Author
Apel, T. ; Bhatla, R. ; Lauterwasser, B.
Author_Institution
Teledyne Electron. Technol., Mountain View, CA, USA
fYear
1993
fDate
10-13 Oct. 1993
Firstpage
359
Lastpage
362
Abstract
The authors describe two advanced MMIC power amplifiers covering the 6-18 GHz and 8-14.5 GHz bands. Both chips are based on a novel two section distributed amplifier structure that employs bandpass networks instead of the conventional lowpass image-parameter networks. A new matrix amplifier structure is also used in the first stage of the 8-14.5 GHz PA. Bias networks are fully integrated to allow automated assembly. Significant milestones in wideband power and efficiency have been achieved.<>
Keywords
HEMT integrated circuits; MMIC power amplifiers; distributed amplifiers; field effect MMIC; microwave power amplifiers; power HEMT; wideband amplifiers; 6 to 18 GHz; 8 to 14.5 GHz; bandpass networks; efficiency; matrix amplifier structure; medium-band; power amplifier MMICs; pseudomorphic HEMT; two section distributed amplifier; wide-band; Assembly; Broadband amplifiers; Circuits; Distributed amplifiers; High power amplifiers; Impedance; MMICs; PHEMTs; Power amplifiers; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1393-3
Type
conf
DOI
10.1109/GAAS.1993.394434
Filename
394434
Link To Document