Improved stability in amorphous silicon germanium solar cells made from hydrogen-diluted silane and germane

Amorphous hydrogenated silicon germanium p-i-n heterojunction solar cells with a-SiGe:H i-layers were deposited in one case from a glow discharge of SiH₄ and GeH₄ diluted in H₂ , and, in a second case, from a discharge of SiH₄ and GeH₄ with no dilution. The cells made from these two discharges had very similar initial conversion efficiencies; however, those having i-layers deposited in the presence ofH₂-dilution were more stable against light-induced degradation. This may be a result of improved material properties as indicated by infrared and Raman analysis