• DocumentCode
    2615317
  • Title

    The effects of nitrogen in HfO2 for improved MOSFET performance

  • Author

    Cho, H. -I ; Kang, C.Y. ; Kang, C.S. ; Choi, R. ; Kim, Y.H. ; Akbar, M.S. ; Choi, C.H. ; Rhee, S.J. ; Lee, J.C.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    68
  • Lastpage
    69
  • Abstract
    In this study, HfSiON was applied as a top layer of HfO2 to achieve higher mobility. The effects of nitrogen and its profile on MOSFET performance of high-k devices are investigated.
  • Keywords
    MOSFET; chemical interdiffusion; dielectric devices; dielectric materials; dielectric thin films; electron mobility; hafnium compounds; impurity distribution; silicon compounds; HfO2 layer; HfSiON-HfO2; MOSFET; high-k devices; nitrogen effect; Capacitance; Charge pumps; Dielectrics and electrical insulation; Hafnium oxide; Impurities; MOSFET circuits; Nitrogen; Thermal stability; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1271999
  • Filename
    1271999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615317