DocumentCode :
2615362
Title :
Improved ESD reliability by using a modulation doped Al0.12Ga0.88N/GaN superlattice in nitride-based LED
Author :
Wen, T.C. ; Chang, S.J. ; Su, Y.K. ; Wu, L.W. ; Kuo, C.H. ; Hsu, Y.P. ; Lai, W.C. ; Sheu, J.K.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
77
Lastpage :
78
Abstract :
Electrostatic discharge (ESD) induced electrical pulse is one of the main reliability concerns of optoelectronic devices. In this paper, a modulation doped Al0.12Ga0.88N/GaN superlattice are introduced to improve ESD reliability in nitrided-based LEDs. The basic idea of this structure is to spread pulse current when LEDs suffer ESD. The ESD-induced pulse current would be spread laterally in 2D electron gas made by Al0.12Ga0.88N/GaN heterostructure. Therefore the probability of junction breakdown would be lower.
Keywords :
III-V semiconductors; aluminium compounds; electrostatic discharge; elemental semiconductors; gallium compounds; light emitting diodes; semiconductor device reliability; semiconductor superlattices; silicon; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; AlGaN-GaN heterostructure; AlGaN-GaN:Si; ESD reliability; Si doped AlGaN-GaN superlattice; electrostatic discharge reliability; nitride based LED; optoelectronic device; Biological system modeling; Electrostatic discharge; Epitaxial layers; Gallium nitride; Humans; Light emitting diodes; Microelectronics; Quantum well devices; Superlattices; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272004
Filename :
1272004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2615362
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