Title :
The Effects of Processing on EEPROM Reliability
Author :
Baglee, D.A. ; Sugawara, T. ; Fukawa, S. ; Mori, K. ; Bellay, L.M. ; Miller, T.
Author_Institution :
Advanced Development Semiconductor Group, Texas Instruments Inc., P.O. Box 1443, MS 633, Houston, Texas 77251-1443
Abstract :
EEPROMs have one significant advantage over the more common EPROM. This is in the ease with which data can be changed in just a matter of milliseconds. In this paper we will investigate the effects that the various critical process steps can have on the two key reliability aspects of these memories, namely: Data Retention and Write/Erase endurance. In particular we will examine effects of the tunnel oxidation conditions and protective overcoat type on these parameters.
Keywords :
EPROM; Electric variables; Gettering; Instruments; Nonvolatile memory; Oxidation; Protection; Temperature control; Testing; Transistors;
Conference_Titel :
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1987.362161
