DocumentCode
2615364
Title
The Effects of Processing on EEPROM Reliability
Author
Baglee, D.A. ; Sugawara, T. ; Fukawa, S. ; Mori, K. ; Bellay, L.M. ; Miller, T.
Author_Institution
Advanced Development Semiconductor Group, Texas Instruments Inc., P.O. Box 1443, MS 633, Houston, Texas 77251-1443
fYear
1987
fDate
31868
Firstpage
93
Lastpage
96
Abstract
EEPROMs have one significant advantage over the more common EPROM. This is in the ease with which data can be changed in just a matter of milliseconds. In this paper we will investigate the effects that the various critical process steps can have on the two key reliability aspects of these memories, namely: Data Retention and Write/Erase endurance. In particular we will examine effects of the tunnel oxidation conditions and protective overcoat type on these parameters.
Keywords
EPROM; Electric variables; Gettering; Instruments; Nonvolatile memory; Oxidation; Protection; Temperature control; Testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1987.362161
Filename
4208695
Link To Document