Deep ultraviolet emission in AlGaN-based quantum wells on bulk AlN substrates

Author

Fareed, Qhalid ; Jain, Rakesh ; Gaska, Remis ; Tamulaitis, Gintautas ; Yilmaz, Lbrahim ; Shur, Michael ; Kuokstis, Edmundas ; Khan, Asif

Author_Institution

Sensor Electron. Technol. Inc., Columbia, SC, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

79

Lastpage

80

Abstract

We studied the structural properties and optical properties of AlGaN-GaN multiple quantum wells (MQW) in a wide range of Al compositions form 45% to 100%. The characterisation by using X-ray, photoluminescence and atomic force microscopy techniques indicated high quality of the grown layers. The shortest emission wavelength measured in AlGaN-based MQWs is around 243 nm.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; atomic force microscopy; gallium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor quantum wells; semiconductor superlattices; wide band gap semiconductors; 243 nm; AlGaN-GaN; AlGaN-GaN MQW; AlGaN-GaN multiple quantum wells; AlN; X-ray diffraction; atomic force microscopy; deep ultraviolet emission; photoluminescence; Aluminum gallium nitride; Artificial intelligence; Atomic force microscopy; Epitaxial layers; Light emitting diodes; Pulse measurements; Quantum well devices; Substrates; Temperature distribution; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272005

Filename

1272005