Title :
Production of 20 A sec-1 a-Si alloys for use in solar cells
Author :
Nath, P. ; Hoffman, K. ; Call, J. ; DiDio, G. ; Ovshinsky, S.R.
Author_Institution :
Sovonics Solar Syst., Troy, MI, USA
Abstract :
The engineering principles used to make >20-A-s-1 intrinsic layers of good-photovoltaic-quality amorphous silicon over large areas are addressed. Deposition equipment was designed and installed in a plasma-assisted CVD (chemical vapor deposition) roll-to-roll processor. Films were made in this machine with gas mixtures containing silane. Same-bandgap tandem solar cells using this material had 8.2% (average) to 8.6% (best cell) conversion efficiencies
Keywords :
CVD coatings; amorphous semiconductors; elemental semiconductors; silicon; solar cells; 8.2 to 8.6 percent; amorphous Si solar cells; plasma-assisted CVD; roll-to-roll processor; semiconductor; Amorphous silicon; Costs; Inductors; Manifolds; Photovoltaic cells; Photovoltaic systems; Plasma temperature; Powders; Production; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111892
