• DocumentCode
    2615410
  • Title

    Interelectrode Metal Migration on GaAs

  • Author

    Kretschmer, K.-H. ; Hartnagel, H.L.

  • Author_Institution
    Institut fÿr Hochfrequenztechnik, Technische Hochschule Darmstadt, MerckstraÃ\x9fe 25, 61oo Darmstadt, FRG
  • fYear
    1987
  • fDate
    31868
  • Firstpage
    102
  • Lastpage
    106
  • Abstract
    Interelectrode material transport in unpassivated and in PECVD-Si3N4-passivated GaAs planar structures was studied using X-Ray-Photoelectron Spectroscopy (XPS). Even in the passivated devices, metal migration through the GaAs/Si3N4-interface was observed. It depends strongly on the GaAs surface conditions prior to nitride deposition. An ammonia treatment of the GaAs surfaces is presented which results in high stability due to a re, duction of As2O3 and of elemental As on the GaAs surface as established by XPS.
  • Keywords
    Chemical technology; Electrodes; Etching; Gallium arsenide; MESFETs; Plasma measurements; Scanning electron microscopy; Stability; Surface treatment; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1987. 25th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1987.362163
  • Filename
    4208697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615410