Title :
Interelectrode Metal Migration on GaAs
Author :
Kretschmer, K.-H. ; Hartnagel, H.L.
Author_Institution :
Institut fÿr Hochfrequenztechnik, Technische Hochschule Darmstadt, MerckstraÃ\x9fe 25, 61oo Darmstadt, FRG
Abstract :
Interelectrode material transport in unpassivated and in PECVD-Si3N4-passivated GaAs planar structures was studied using X-Ray-Photoelectron Spectroscopy (XPS). Even in the passivated devices, metal migration through the GaAs/Si3N4-interface was observed. It depends strongly on the GaAs surface conditions prior to nitride deposition. An ammonia treatment of the GaAs surfaces is presented which results in high stability due to a re, duction of As2O3 and of elemental As on the GaAs surface as established by XPS.
Keywords :
Chemical technology; Electrodes; Etching; Gallium arsenide; MESFETs; Plasma measurements; Scanning electron microscopy; Stability; Surface treatment; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1987.362163
