Title :
Spray etch recess process for high yield analog GaAs MMICs
Author :
Ebrahimi, N.B. ; Kuorsiung Li ; Fowler, P.J.
Author_Institution :
Anadigics, Inc., Warren, NJ, USA
Abstract :
Gate recess spray etch and bath-immersion etch processes are compared in the manufacturing of high yield analog GaAs MMICs. Detailed experiment work together with statistical analysis have determined the superiority of the spray etch process over the bath-immersion process. Optimization and implementation of the spray etch process in a three-inch GaAs wafer fabrication line are discussed. Improvements in device current uniformity, circuit RF test yield, and overall yield are demonstrated for the spray etch recess process, in the production of GaAs MMICs.<>
Keywords :
III-V semiconductors; circuit optimisation; etching; field effect MMIC; field effect analogue integrated circuits; gallium arsenide; integrated circuit technology; integrated circuit yield; statistical analysis; GaAs; III-V semiconductor; analog MMIC manufacture; circuit RF test yield; device current uniformity; gate recess spray etch; high yield; optimization; overall yield; spray etch process; statistical analysis; wafer fabrication line; Circuit testing; Etching; Fabrication; Gallium arsenide; MMICs; Manufacturing processes; Production; Radio frequency; Spraying; Statistical analysis;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394443
