Spray etch recess process for high yield analog GaAs MMICs

Author

Ebrahimi, N.B. ; Kuorsiung Li ; Fowler, P.J.

Author_Institution

Anadigics, Inc., Warren, NJ, USA

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

321

Lastpage

324

Abstract

Gate recess spray etch and bath-immersion etch processes are compared in the manufacturing of high yield analog GaAs MMICs. Detailed experiment work together with statistical analysis have determined the superiority of the spray etch process over the bath-immersion process. Optimization and implementation of the spray etch process in a three-inch GaAs wafer fabrication line are discussed. Improvements in device current uniformity, circuit RF test yield, and overall yield are demonstrated for the spray etch recess process, in the production of GaAs MMICs.<>

Keywords

III-V semiconductors; circuit optimisation; etching; field effect MMIC; field effect analogue integrated circuits; gallium arsenide; integrated circuit technology; integrated circuit yield; statistical analysis; GaAs; III-V semiconductor; analog MMIC manufacture; circuit RF test yield; device current uniformity; gate recess spray etch; high yield; optimization; overall yield; spray etch process; statistical analysis; wafer fabrication line; Circuit testing; Etching; Fabrication; Gallium arsenide; MMICs; Manufacturing processes; Production; Radio frequency; Spraying; Statistical analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394443

Filename

394443