• DocumentCode
    2615424
  • Title

    Dependence of film morphology on growth rate in ITO/TPD/Alq3/Al organic luminescent diodes

  • Author

    Mu, H. ; Shen, H. ; Klotzkin, D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    In this paper, we study about the effect of growth kinetics, governed by deposition conditions, on the formation of pinholes is studied in order to optimize the film growth conditions. The morphology of the resultant film observed under an SEM and AFM. Surface morphology of thermal evaporated TPD/Alq3double layer show strong dependence on the evaporation rate, and the high evaporation rate, which result in dense and texture films, is more for the illumination of organic luminescent diode.
  • Keywords
    aluminium; atomic force microscopy; indium compounds; organic compounds; organic light emitting diodes; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; surface morphology; texture; vacuum deposition; AFM; ITO-Al; InSnO-Al; SEM; TPD/Alq3double layer; evaporation rate; film deposition; film morphology; growth kinetics; growth rate; illumination; organic luminescent diodes; pinholes; surface morphology; texture films; Application software; Computer displays; Fabrication; Flat panel displays; Glass; Indium tin oxide; Organic light emitting diodes; Surface morphology; Surface texture; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272007
  • Filename
    1272007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615424