Title :
Dependence of film morphology on growth rate in ITO/TPD/Alq3/Al organic luminescent diodes
Author :
Mu, H. ; Shen, H. ; Klotzkin, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
Abstract :
In this paper, we study about the effect of growth kinetics, governed by deposition conditions, on the formation of pinholes is studied in order to optimize the film growth conditions. The morphology of the resultant film observed under an SEM and AFM. Surface morphology of thermal evaporated TPD/Alq3double layer show strong dependence on the evaporation rate, and the high evaporation rate, which result in dense and texture films, is more for the illumination of organic luminescent diode.
Keywords :
aluminium; atomic force microscopy; indium compounds; organic compounds; organic light emitting diodes; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; surface morphology; texture; vacuum deposition; AFM; ITO-Al; InSnO-Al; SEM; TPD/Alq3double layer; evaporation rate; film deposition; film morphology; growth kinetics; growth rate; illumination; organic luminescent diodes; pinholes; surface morphology; texture films; Application software; Computer displays; Fabrication; Flat panel displays; Glass; Indium tin oxide; Organic light emitting diodes; Surface morphology; Surface texture; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272007
