Title :
GaAs wafer breakage: Causes and cures, growth and process
Author :
Cordner, T. ; Marks, B.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
The impact of GaAs wafer breakage on processing facilities is discussed. Wafer strength and equipment assessment are detailed. The authors describe many of the improvements that have resulted in the virtual elimination of wafer breakage due to unassignable causes. When proper material and process control techniques are used, GaAs wafer breakage should not occur.<>
Keywords :
III-V semiconductors; economics; gallium arsenide; materials testing; process control; semiconductor device manufacture; semiconductor technology; GaAs; III-V semiconductor; break testing; equipment assessment; material control; material issues; people-related issues; process control; processing facilities; wafer breakage; wafer strength assessment; Costs; Delay; Etching; Fabrication; Foundries; Gallium arsenide; Instruments; Process planning; Production planning; Testing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394444
