DocumentCode
2615446
Title
GaAs wafer breakage: Causes and cures, growth and process
Author
Cordner, T. ; Marks, B.
Author_Institution
Texas Instruments Inc., Dallas, TX, USA
fYear
1993
fDate
10-13 Oct. 1993
Firstpage
317
Lastpage
320
Abstract
The impact of GaAs wafer breakage on processing facilities is discussed. Wafer strength and equipment assessment are detailed. The authors describe many of the improvements that have resulted in the virtual elimination of wafer breakage due to unassignable causes. When proper material and process control techniques are used, GaAs wafer breakage should not occur.<>
Keywords
III-V semiconductors; economics; gallium arsenide; materials testing; process control; semiconductor device manufacture; semiconductor technology; GaAs; III-V semiconductor; break testing; equipment assessment; material control; material issues; people-related issues; process control; processing facilities; wafer breakage; wafer strength assessment; Costs; Delay; Etching; Fabrication; Foundries; Gallium arsenide; Instruments; Process planning; Production planning; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1393-3
Type
conf
DOI
10.1109/GAAS.1993.394444
Filename
394444
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