DocumentCode :
2615512
Title :
The Effect of Metal Film Topography and Lithography on Grain Size Distributions and on Electromigration Performance
Author :
Strausser, Y.E. ; Euzent, B.L. ; Smith, R.C. ; Tracy, B.M. ; Wu, K.
Author_Institution :
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA, 95051
fYear :
1987
fDate :
31868
Firstpage :
140
Lastpage :
144
Abstract :
Electromigration performance of a variety of test structures has demonstrated a significant dependence of mean time to failure on topography. In particular, the severity and frequency of steps, both over poly and into and out of contacts, are the primary variables influencing the electromigration results. Materials studies show that the most significant materials parameter that changes at steps is grain size. In fact, it is shown that both lithography dimensions and the presence of topographic variations cause a variation in grain size. The conclusion of the study is that both the topography and lithography of the devices must be comprehended in designing test patterns for the estimation of electromigration performance of actual product devices.
Keywords :
Electromigration; Failure analysis; Frequency; Grain size; Inorganic materials; Life estimation; Lithography; Metallization; Surfaces; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location :
San Diego, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1987.362170
Filename :
4208704
Link To Document :
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