Title :
4 Gb/s two-level to 2 symbol/s four-level converter GaAs IC for semiconductor optical amplifier modulators
Author :
Riishoj, J. ; Nielsen, T.N. ; Gliese, U. ; Stubkjaer, K.E.
Author_Institution :
Center for Broadband Telecommun., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
A design of a 50 /spl Omega/ impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier modulators is presented. Eye diagrams with good eye openings and 0.33 V spacing between adjacent logic levels are demonstrated for input bit rates up to 4 Gb/s. A novel differential super buffer output driver is applied and output reflection coefficients.<>
Keywords :
III-V semiconductors; application specific integrated circuits; bipolar logic circuits; buffer circuits; differential amplifiers; driver circuits; gallium arsenide; impedance matching; integrated optoelectronics; modulation coding; optical communication equipment; optical modulation; quadrature phase shift keying; 4 Gbits/s; 50 ohm; ASIC; GaAs; III-V semiconductor; QASK; SCFL; demultiplexer; design; differential super buffer output driver; encoder circuit principle; full-custom; impedance matched; optical QPSK; semiconductor optical amplifier modulators; two-electrode; two-to-four level converter; Bit rate; Driver circuits; Gallium arsenide; Impedance; Logic; Optical buffering; Optical design; Optical modulation; Photonic integrated circuits; Semiconductor optical amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394447
