DocumentCode :
2615595
Title :
Nitride-based HFETs with carrier confinement layers
Author :
Chang, S.J. ; Su, E.K. ; Kuan, T.M. ; Ko, C.H. ; Wei, S.C. ; Lan, W.H. ; Cherng, Y.T. ; Chen, S.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
104
Lastpage :
105
Abstract :
Nitride-based Al0.24Ga0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were fabricated. The results found that the enhanced 2 dimensional electron gas (2DEG) carrier mobility from 1070 to 1180 cm2V-1sec-1 by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp2Mg flow rate of 2.36×10-8 mole/min and smoother sample surface. The DC and RF characteristics of these HFETs were also good.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; field effect transistors; gallium compounds; magnesium; surface roughness; wide band gap semiconductors; AlGaN-GaN; Mg; Mg doped semiinsulating carrier confinement layers; carrier mobility; heterostructure field effect transistors; nitride based HFET; two dimensional electron gas; Carrier confinement; Electron mobility; Gallium nitride; HEMTs; MODFETs; Radio frequency; Research and development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272016
Filename :
1272016
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2615595
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