4 THz sidewall-etched varactors for sub-mm-wave sampling circuits

Author

Allen, S.T. ; Bhattacharya, U. ; Rodwell, M.J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

285

Lastpage

287

Abstract

Schottky varactor diodes with 4 THz cutoff frequencies were fabricated using 1 /spl mu/m lithography and self-aligned RIE sidewall etching. A novel microwave characterization technique was used to determine the diode cutoff frequency. Using these devices, subpicosecond pulse generators integrated with 515 GHz bandwidth sampling circuits were fabricated.<>

Keywords

Schottky diodes; coplanar waveguides; frequency multipliers; pulse generators; signal sampling; sputter etching; submillimetre wave diodes; submillimetre wave integrated circuits; varactors; 4 THz; 425 GHz; 515 GHz; CPW; GaAs; III-V semiconductor; Schottky varactor diodes; cutoff frequencies; microwave characterization technique; nonlinear transmission lines; self-aligned RIE sidewall etching; sub-mm-wave sampling circuits; subpicosecond pulse generators; Circuits; Cutoff frequency; Etching; Lithography; Microwave devices; Microwave theory and techniques; Pulse generation; Sampling methods; Schottky diodes; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394450

Filename

394450