Title :
Surface properties of Si-doped GaN films
Author :
Lin, T.Y. ; Su, W.S. ; Su, W.S. ; Chen, Y.F.
Author_Institution :
Inst. of Optoelectron. Sci., Nat. Taiwan Ocean Univ., Keelung, Taiwan
Abstract :
In this paper we report surface properties of Si-doped GaN films by electric force microscopy and its influence on photoluminescence spectra. The increased PL ratio of the UV luminescence is indicative of reduction in surface recombination velocity due to the changes of surface states.
Keywords :
III-V semiconductors; gallium compounds; photoluminescence; semiconductor epitaxial layers; silicon; surface recombination; surface roughness; surface states; wide band gap semiconductors; GaN:Si; Si-doped GaN films; UV luminescence; electric force microscopy; photoluminescence spectra; surface properties; surface recombination; surface states; Doping; Electrostatics; Force measurement; Gallium nitride; Luminescence; Ocean temperature; Optical films; Optical microscopy; Sea surface; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272017
