Ultra-high electric field transport in GaN-based heterostructures

Author

Vitusevich, S.A. ; Danylyuk, S.V. ; Danilchenko, B.A. ; Klein, N. ; Zelenskyi, S.E. ; Budnik, A.P. ; Avksentyev, A.Yu. ; Sokolov, V.N. ; Kochelap, V.A. ; Belyaev, A.E. ; Petrychuk, M.V. ; Lüth, H.

Author_Institution

Inst. fur Schicht. und Grenzflachen, Forschungszentrum Julich, Germany

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

108

Lastpage

109

Abstract

In this paper, we presented results of steady state and pulse measurement of AlGaN/GaN heterostructures up to ultra high electric fields accompanied by low frequency noise measurements. Hot electron relaxation process were analysed. The contact resistance was measured in low field (ohmic) region and taken into account when calculating the average electric field. The velocity-field characteristics in AlGaN/GaN heterostructures obtained by measurement of the current-voltage characteristics. The spectra of the normalised current noise for different values of electric field E measured at T=300 K for the device with channel length of 25 μm and width of 100 μm is studied through experimental results.

Keywords

III-V semiconductors; aluminium compounds; carrier density; carrier mobility; contact resistance; gallium compounds; high electron mobility transistors; hot carriers; ohmic contacts; semiconductor device measurement; semiconductor device noise; semiconductor heterojunctions; wide band gap semiconductors; 100 micron; 25 micron; 300 K; AlGaN-GaN; AlGaN-GaN heterostructures; GaN-based heterostructures; channel length; contact resistance; current-voltage characteristics; drift velocities; hot electron relaxation; low frequency noise measurements; normalised current noise spectra; ohmic contact; pulse measurement; ultra high electric field transport; velocity-field characteristics; Aluminum gallium nitride; Current measurement; Electric variables measurement; Electrical resistance measurement; Frequency measurement; Gallium nitride; Low-frequency noise; Noise measurement; Pulse measurements; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272018

Filename

1272018