Title :
High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band
Author :
Braunstein, J. ; Schlechtweg, M. ; Tasker, P.J. ; Reinert, W. ; Hulsmann, A. ; Kohler, K. ; Bronner, W. ; Bosch, R. ; Haydl, W.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
Several millimeter-wave MMICs were fabricated successfully using 0.16 /spl mu/m pseudomorphic MODFET technology. A five-stage distributed amplifier has 9.3 dB gain over the frequency range 5 GHz to 80 GHz and a noise figure less than 4.3 dB up to 60 GHz. A narrowband three-stage low noise amplifier delivers more than 21 dB gain between 70 and 80 GHz. For the first time Cascode transistors in CPW-technology were used for a distributed amplifier achieving a gain bandwidth product of 744 GHz*dB.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; distributed amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; indium compounds; microwave amplifiers; millimetre wave amplifiers; wideband amplifiers; 21 dB; 5 to 80 GHz; 70 to 80 GHz; 9.3 dB; CPW-technology; Cascode transistors; III-V semiconductor; InGaAs-GaAs; MIMIC; W-band; five-stage distributed amplifier; high performance; millimeter-wave MMIC; narrow bandwidth amplifiers; pseudomorphic MODFET; three-stage low noise amplifier; wide bandwidth amplifiers; Bandwidth; Distributed amplifiers; Frequency; Gain; HEMTs; MMICs; MODFETs; Millimeter wave technology; Millimeter wave transistors; Noise figure;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394452
