Growth parameter dependence of gain compression in AlGaN/GaN HFETs

GaN-based HFETS have been demonstrated in applications involving high power and temperature. Gain compression is calculated based upon the circuit topography. The intrinsic circuit parameters are obtained from physics based model that incorporates a Schrodinger-Poisson´s solver to self-consistently determine the 2DEG concentration in the channel. The self-consistent calculation incorporates the effect of both spontaneous and piezoelectric polarization present in the barrier AlGaN and the underlying GaN layers. Transport parameters are obtained by solving time dependent Boltzman transport equation using ensemble Monte Carlo technique. Device nonlinearity is analyzed using Volterra series analysis. Gain compression as a function of input power with Al_XGa_1-XN barrier layer mole fraction is studied by experiments.