Title :
75-110 GHz InGaAs/GaAs HEMT high gain MMIC amplifier
Author :
Liu, S.M.J. ; Duh, K.H.G. ; Wang, S.C. ; Tang, O.S.A. ; Smith, P.M.
Author_Institution :
Martin Marietta Electron. Lab., Syracuse, NY, USA
Abstract :
A monolithic four-stage gain block amplifier based on 0.1 /spl mu/m InGaAs/GaAs PHEMT technology has been developed for wideband signal amplification covering the full W-band of 75 to 110 GHz. The development is part of an effort to build a low cost receiver module where full W-band instantaneous bandwidth is required. The measured gain averages about 22 dB while the noise figure ranges from 5.3 dB to 6.8 dB across the band. This is the first full W-band PHEMT MMIC amplifier to be reported, and its gain and noise figure performance compare favorably with other narrowband W-band circuits reported. Careful device and circuit characterization, repeatability of fabrication process, and design optimization played the main role in leading to the first-pass success of this MMIC.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; wideband amplifiers; 22 dB; 5.3 to 6.8 dB; 75 to 110 GHz; III-V semiconductors; InGaAs-GaAs; MIMIC; W-band; design optimization; high gain MMIC amplifier; low cost receiver module; monolithic four-stage gain block amplifier; pseudomorphic HEMT; repeatability of fabrication; wideband signal amplification; Bandwidth; Broadband amplifiers; Circuits; Costs; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; Noise figure; PHEMTs;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394453
