Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique

Author

Lee, Jasun ; Liu, Dongmin ; Lu, Wn

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

112

Lastpage

113

Abstract

A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 °C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 °C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 μm gate length and 100 μm gate width is studied by experimental results.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; rapid thermal annealing; semiconductor device breakdown; semiconductor device metallisation; semiconductor epitaxial layers; wide band gap semiconductors; 0.3 micron; 100 micron; 30 sec; 700 degC; 900 degC; AlGaN-GaN; AlGaN/GaN high electron mobility transistors; breakdown voltage; metallization; post annealing technique; rapid thermal annealing system; Aluminum gallium nitride; Annealing; Breakdown voltage; Electron mobility; Gallium nitride; Metallization; Microwave devices; Performance gain; Radio frequency; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272020

Filename

1272020