Title :
Electron mobility model for silicon carbide inversion layers
Author :
Zeng, Yu Anne ; White, Marvin H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFET was fabricated on an aluminium-implanted surface and the transfer characteristics are analysed, then the corresponding transconductance curves are compared.
Keywords :
MOSFET; electron mobility; semiconductor device models; semiconductor process modelling; silicon compounds; surface roughness; wide band gap semiconductors; Al; SiC; SiC MOSFET; aluminium-implanted surface; coulomb scattering; electron mobility model; silicon carbide inversion layers; surface roughness; transconductance; Electron mobility; MOSFET circuits; Particle scattering; Power MOSFET; Rough surfaces; Silicon carbide; Surface roughness; Surface treatment; Temperature; Thermal conductivity;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272022
