DocumentCode :
2615702
Title :
"Measurement of Silicon Strength as Affected by Wafer Back Processing"
Author :
Hawkins, George ; Berg, Howard ; Mahalingam, Mali ; Lewis, Gary ; Lofgran, Lynn
Author_Institution :
Motorola, Inc., Semiconductor Products Sector M.S. B-136, 5005 East McDowell Road, Phoenix, Arizona 85008. Phone (602) 244-3006
fYear :
1987
fDate :
31868
Firstpage :
216
Lastpage :
223
Abstract :
The distribution of strength of silicon chips has been measured by bending a chip between a soft ball and pad. The chip strength is controlled by flaws introduced by processing and the critical flaws can be located and analyzed after the chip breaks. The flaw sizes can be predicted reasonably well from the fracture toughness of silicon. Wafer back etching strengthens the chip, but the response depends on whether the wafer was lapped or ground.
Keywords :
Circuits; Etching; Power dissipation; Probability distribution; Semiconductor device measurement; Semiconductor device packaging; Semiconductor devices; Silicon; Thermal expansion; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location :
San Diego, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1987.362182
Filename :
4208716
Link To Document :
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