DocumentCode
2615711
Title
Numerical and experimental characterization of 4H-SiC Schottky diodes
Author
Zhang, Xiaohu ; Goldsman, N. ; Bernstein, J.B. ; McGarrity, J.M. ; Powell, Stephen K.
Author_Institution
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
120
Lastpage
121
Abstract
In this paper, experiment and simulation on n-type Ti/4H SiC Schottky diodes were performed. I-V measurements for 4H-SiC Schottky diodes under different temperatures were performed in an ITS8000 testing system. The combined use of the device simulator and experiments to extract key physical parameters, including temperature dependent mobility, and Schottky barrier height.
Keywords
Schottky diodes; electron mobility; semiconductor device models; silicon compounds; thermal conductivity; titanium; wide band gap semiconductors; 4H-SiC Schottky diodes; I-V measurements; Schottky barrier height; Ti-SiC; numerical analysis; physical parameters; temperature dependent mobility; Doping; Electrons; Photonic band gap; Power engineering and energy; Power engineering computing; Schottky diodes; Silicon carbide; Temperature dependence; Temperature measurement; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272023
Filename
1272023
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