Title :
Numerical and experimental characterization of 4H-SiC Schottky diodes
Author :
Zhang, Xiaohu ; Goldsman, N. ; Bernstein, J.B. ; McGarrity, J.M. ; Powell, Stephen K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Abstract :
In this paper, experiment and simulation on n-type Ti/4H SiC Schottky diodes were performed. I-V measurements for 4H-SiC Schottky diodes under different temperatures were performed in an ITS8000 testing system. The combined use of the device simulator and experiments to extract key physical parameters, including temperature dependent mobility, and Schottky barrier height.
Keywords :
Schottky diodes; electron mobility; semiconductor device models; silicon compounds; thermal conductivity; titanium; wide band gap semiconductors; 4H-SiC Schottky diodes; I-V measurements; Schottky barrier height; Ti-SiC; numerical analysis; physical parameters; temperature dependent mobility; Doping; Electrons; Photonic band gap; Power engineering and energy; Power engineering computing; Schottky diodes; Silicon carbide; Temperature dependence; Temperature measurement; Thermal conductivity;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272023
