Title :
A new edge termination technique for SiC power devices
Author :
Hu, Shuntao ; Sheng, Kuang
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.
Keywords :
electric breakdown; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; SiC power devices; dielectric mesa; edge termination method; implantation induced reverse leakage; oxide breakdown; Breakdown voltage; Design optimization; Dielectric breakdown; Dielectric devices; Electric breakdown; Electrodes; Permittivity; Power engineering and energy; Power engineering computing; Silicon carbide;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272024
