Unique determination of AlGaAs/GaAs HBT´s small-signal equivalent circuit parameters

Author

Der-Woei Wu ; Miller, D.L. ; Fukuda, M. ; Yong-Hoon Yun

Author_Institution

Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

259

Lastpage

262

Abstract

A new parameter extraction technique for heterojunction bipolar transistors (HBTs) is described. Utilizing a novel low frequency extraction algorithm, the intrinsic elements and the resistive parasitics are obtained. The overall small-signal equivalent circuit of HBTs is then determined based on those extracted element values. This technique advances current equivalent circuit modeling capability of HBTs by minimizing the interactive computer optimization/simulation process and removing the need of special test structures.<>

Keywords

III-V semiconductors; S-parameters; aluminium compounds; electronic engineering computing; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; HBT; III-V semiconductor; S-parameters; device design; intrinsic elements; low frequency extraction algorithm; minimised computer simulation; parameter extraction technique; resistive parasitics; small-signal equivalent circuit parameters; Circuit testing; Contact resistance; Equations; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit interconnections; Parasitic capacitance; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394456

Filename

394456