Title :
A new lateral insulated gate bipolar transistor for suppressing parasitic thyristor latch-up by employing a folded gate
Author :
Oh, Jae-Keun ; Ha, Min-Woo ; Choi, Yearn-lk ; Han, Min-Koo
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
In this paper, a new LIGBT which suppresses the parasitic thyristor latch-up without sacrificing forward voltage drop by employing folded gate structure. It is verified the proposed device by three dimensional device simulator ISE TCAD.
Keywords :
current density; elemental semiconductors; insulated gate bipolar transistors; semiconductor device models; silicon; technology CAD (electronics); thyristors; Si; TCAD; folded gate; lateral insulated gate bipolar transistor; parasitic thyristor latch-up; three dimensional structure; two dimensional hole current density; Bipolar transistors; Current density; Degradation; Educational institutions; Etching; Insulated gate bipolar transistors; Ion implantation; Silicon; Thyristors; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272025
