DocumentCode
2615755
Title
A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphere
Author
Derenge, M.A. ; Jones, K.A. ; Kirchner, K. ; Ervin, M.
Author_Institution
US Army Res. Lab., Maryland Univ., College Park, MD, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
126
Lastpage
127
Abstract
In this paper, AlN films annealing cap for 4H SiC in a nitrogen and argon atmosphere and also the samples are imaged by SEM and AFM to examine the surface morphology of the AlN film. The results obtained from this experiments are compared.
Keywords
III-V semiconductors; aluminium compounds; annealing; argon; atomic force microscopy; nitrogen; scanning electron microscopy; semiconductor thin films; silicon compounds; surface morphology; wide band gap semiconductors; 1500 degC; 1600 degC; 30 min; 4H SiC annealing; AFM; AlN; AlN annealing; SEM; SiC; pulse laser deposition; surface morphology; Annealing; Argon; Atmosphere; Etching; Nitrogen; Pulsed laser deposition; Silicon carbide; Surface morphology; Temperature; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272026
Filename
1272026
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