High-performance GaAs switch ICs fabricated using MESFETs with two kinds of pinch-off voltages [for handy phone]

Author

Uda, H. ; Sawai, T. ; Yamada, T. ; Nogawa, K. ; Harada, Y.

Author_Institution

Sanyo Electric Co., Ltd., Osaka, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

247

Lastpage

250

Abstract

GaAs MESFET switch ICs operating at low control voltages of 0V/-3V and +3V/0V have been developed for use in the personal handy phone using 1.9 GHz band. The switch ICs have excellent RF characteristics, and have no need for external circuit installation. The unique points of these ICs are the use of GaAs MESFETs with two kinds of pinch-off voltages and a symmetrical source and drain pattern configuration with respect to the gate. The 0V/-3V IC had a low insertion loss of 0.55 dB and 0.65 dB, and high isolation of 31 dB and 24 dB at receiving and transmitting operation, respectively. The +3V/0V IC also had excellent characteristics such as insertion loss of 0.73 dB and 0.95 dB, and isolation of 27 dB and 23 dB, respectively. Both ICs had an output power at 1 dB gain compression point of 25.4 dBm and third-order intercept point of more than 46 dBm.<>

Keywords

III-V semiconductors; MESFET integrated circuits; UHF field effect transistors; UHF integrated circuits; cordless telephone systems; field effect MMIC; field effect transistor switches; gallium arsenide; power MESFET; power field effect transistors; power semiconductor switches; -3 V; 0 V; 0.55 dB; 0.65 dB; 0.73 dB; 0.95 dB; 1.9 GHz; 3 V; GaAs; III-V semiconductor; MESFET switch IC; MMIC; SPDT switch; high isolation; high performance; low control voltages; low insertion loss; miniaturized; personal handy phone; pinch-off voltages; symmetrical drain pattern configuration; symmetrical source pattern configuration; Gallium arsenide; Insertion loss; Low voltage; MESFETs; Power generation; Propagation losses; Radio frequency; Switches; Switching circuits; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394459

Filename

394459