• DocumentCode
    2615803
  • Title

    Silicon carbide ultraviolet photodetectors

  • Author

    Sankin, V.I. ; Shkrebiy, P.P. ; Savkina, N.S.

  • Author_Institution
    A.F. Ioffe Physico-Tech. Inst., Acad. of Sci., St. Petersburg, Russia
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    130
  • Lastpage
    131
  • Abstract
    In this work, silicon carbide ultraviolet photodetectors were presented. Photosensitivity spectra of a photodetector with p-n junction formed by the diffusion of Al recorded at different temperatures.
  • Keywords
    aluminium; diffusion; p-n junctions; photodetectors; silicon compounds; wide band gap semiconductors; Al; Al diffusion; SiC; p-n junction; photosensitivity spectra; silicon carbide ultraviolet photodetectors; Aluminum; Artificial intelligence; Electromagnetic wave absorption; Lighting; Photodetectors; Radiative recombination; Silicon carbide; Surface treatment; Temperature sensors; Xenon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272028
  • Filename
    1272028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615803