DocumentCode :
2615803
Title :
Silicon carbide ultraviolet photodetectors
Author :
Sankin, V.I. ; Shkrebiy, P.P. ; Savkina, N.S.
Author_Institution :
A.F. Ioffe Physico-Tech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
130
Lastpage :
131
Abstract :
In this work, silicon carbide ultraviolet photodetectors were presented. Photosensitivity spectra of a photodetector with p-n junction formed by the diffusion of Al recorded at different temperatures.
Keywords :
aluminium; diffusion; p-n junctions; photodetectors; silicon compounds; wide band gap semiconductors; Al; Al diffusion; SiC; p-n junction; photosensitivity spectra; silicon carbide ultraviolet photodetectors; Aluminum; Artificial intelligence; Electromagnetic wave absorption; Lighting; Photodetectors; Radiative recombination; Silicon carbide; Surface treatment; Temperature sensors; Xenon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272028
Filename :
1272028
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2615803
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