Title :
A simple design technique for the Gilbert cell in MMIC technology: Application to a DSB modulator
Author :
Alonso, J.I. ; Sanchez, J.C.
Author_Institution :
Dpto. de Senales, Sistemas y Radiocomunicaciones, E.T.S.I. de Telecomunicacion, Madrid, Spain
Abstract :
A theoretical analysis of the Gilbert cell has been performed in order to accomplish a simple design method which allows one to choose the width and the bias point (% of I/sub DSS/) of the MESFET transistors of the Gilbert cell. A wide band (1 to 5 GHz) double side band modulator has been designed and built using this method. It is comprised of an input differential amplifier, a Gilbert cell and an output differential amplifier and it has been implemented with the F20 0.5 /spl mu/m Process of GEC Marconi. A carrier rejection of 50 dB and a third order intermodulation rejection of 47 dB have been measured at 2 GHz. The DC power consumption of the Gilbert cell is 136 mW.<>
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; MMIC mixers; circuit CAD; circuit analysis computing; differential amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; intermodulation; microwave amplifiers; millimetre wave amplifiers; millimetre wave mixers; modulators; 1 to 5 GHz; 136 mW; DC power consumption; DSB modulator; GaAs; Gilbert cell; III-V semiconductor; LIBRA simulation; MATLAB; MESFET transistors; MMIC technology; bias point; carrier rejection; design method; input differential amplifier; output differential amplifier; small signal quasilinear analysis; third order intermodulation rejection; wide band; width; Chirp modulation; Equivalent circuits; Frequency modulation; MESFETs; MMICs; Phase modulation; RF signals; Radio frequency; Schottky diodes; Signal analysis;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394464
