Photoluminescence studies of anodic-oxide-induced intermixing of GaAs/AlGaAs quantum well heterostructures

Author

Burke, P.T. ; Gal, M. ; Yuan, Shu ; Kim, Yong ; Jagadish, C.

Author_Institution

Sch. of Phys., New South Wales Univ., Kensington, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

122

Lastpage

125

Abstract

A novel impurity-free interdiffusion technique, anodic-oxide-induced intermixing is demonstrated. A pulsed anodization of GaAs/AlGaAs quantum well heterostructures (QWH) with subsequent rapid thermal annealing (RTA) at 900°C, is studied. Blue shifts of up to 72meV have been observed by photoluminescence (PL) in intermixed samples with no significant broadening of the linewidth and good retention of PL intensity. The blueshift in the PL spectra is shown to increase with no sign of saturation with RTA times up to 120 seconds

Keywords

III-V semiconductors; aluminium compounds; anodisation; chemical interdiffusion; gallium arsenide; photoluminescence; rapid thermal annealing; semiconductor quantum wells; spectral line shift; 120 s; 900 C; GaAs-AlGaAs; GaAs/AlGaAs quantum well heterostructures; PL intensity retention; RTA; anodic-oxide-induced intermixing; blue shifts; impurity-free interdiffusion technique; photoluminescence; pulsed anodization; Atomic beams; Atomic layer deposition; Australia; Gallium arsenide; MOCVD; Measurement standards; Oxidation; Performance evaluation; Photoluminescence; Rapid thermal annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610087

Filename

610087