Title :
A new wideband modeling technique for deep sub-micron MOSFETs
Author :
Chiou, Ming Hsiang ; Hsu, Klaus Y J
Abstract :
In this presentation, a new modeling technique to exactly describe the time-domain (TD) responses of deep sub-micron MOSFETs, which leads to wideband models. This new method is suitable for modeling of MOSFETs used in high-speed or switching type circuits. To meet the wideband requirement without any alteration on the DC bias condition, the equivalent circuit models incorporate BSIM3v3 during the modelling process.
Keywords :
MOSFET; equivalent circuits; semiconductor device models; time-domain analysis; DC bias; deep submicron MOSFET; equivalent circuit models; high-speed circuits; semiconductor device models; switching type circuits; time domain responses; wideband modeling; Circuit simulation; Data mining; Equivalent circuits; MOSFET circuits; Switching circuits; Time domain analysis; Wideband;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272033
