GaAs on InP MESFETs and circuits for OEICs

Author

Clei, A. ; Sainson, S. ; Feuillade, M. ; Sauv, K. ; Azoulay, R. ; Dumas, J.M. ; Chertouk, M. ; Calliger, O. ; Lefevre, R.

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

201

Lastpage

204

Abstract

High performance FETs and circuits realized on GaAs layers heteroepitaxially grown on InP are described. Low parasitic effects are ascertained by noise and pulse measurements indicating a low electrical activity of the defects related to the lattice mismatch. 0.3 /spl mu/m gatelength laser drivers show satisfactory behavior at 10 Gbit/s. Device degradation observed after accelerated aging tests results from contact degradation rather than from mismatched materials problems. GaAs on InP FETs appear to be good candidates for 1.3-1.55 /spl mu/m OEICs.<>

Keywords

III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; differential amplifiers; driver circuits; electron beam lithography; gallium arsenide; indium compounds; integrated circuit interconnections; integrated optoelectronics; photolithography; preamplifiers; semiconductor device noise; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 0.3 micron; 1.3 to 1.55 micron; 10 Gbit/s; GaAs-InP; III-V semiconductor; MESFET; MOVPE; OEIC; accelerated aging; contact degradation; electron beam lithography; heteroepitaxially; high performance; interconnections; laser drivers; lattice mismatch; low defect electrical activity; low parasite effects; noise; optical lithography; photodetector preamplifiers; Circuit noise; Degradation; Driver circuits; FETs; Gallium arsenide; Indium phosphide; Laser noise; Lattices; MESFETs; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394469

Filename

394469