Title :
GaAs on InP MESFETs and circuits for OEICs
Author :
Clei, A. ; Sainson, S. ; Feuillade, M. ; Sauv, K. ; Azoulay, R. ; Dumas, J.M. ; Chertouk, M. ; Calliger, O. ; Lefevre, R.
Abstract :
High performance FETs and circuits realized on GaAs layers heteroepitaxially grown on InP are described. Low parasitic effects are ascertained by noise and pulse measurements indicating a low electrical activity of the defects related to the lattice mismatch. 0.3 /spl mu/m gatelength laser drivers show satisfactory behavior at 10 Gbit/s. Device degradation observed after accelerated aging tests results from contact degradation rather than from mismatched materials problems. GaAs on InP FETs appear to be good candidates for 1.3-1.55 /spl mu/m OEICs.<>
Keywords :
III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; differential amplifiers; driver circuits; electron beam lithography; gallium arsenide; indium compounds; integrated circuit interconnections; integrated optoelectronics; photolithography; preamplifiers; semiconductor device noise; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 0.3 micron; 1.3 to 1.55 micron; 10 Gbit/s; GaAs-InP; III-V semiconductor; MESFET; MOVPE; OEIC; accelerated aging; contact degradation; electron beam lithography; heteroepitaxially; high performance; interconnections; laser drivers; lattice mismatch; low defect electrical activity; low parasite effects; noise; optical lithography; photodetector preamplifiers; Circuit noise; Degradation; Driver circuits; FETs; Gallium arsenide; Indium phosphide; Laser noise; Lattices; MESFETs; Pulse measurements;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394469
