Title :
A new method for an efficient optimization of MOS transistor models
Author :
Pörnbacher, F. ; Fichter, U. ; Müller-Liebler, G. ; Zapf, H.
Author_Institution :
Siemens AG, Munich, West Germany
Abstract :
Two methods that are especially useful for an accurate optimization of complex transistor models are presented. The first method focuses on sample reduction before the optimization process. An algorithm is described which allows a reduction of the number of samples by a factor of 10 to 20 in an efficient way. The second method is a trust-region-type optimization algorithm which is especially designed for this application. A substantial part of it is a new algorithm for the calculation of the step length. Industrial examples demonstrating the quality of the algorithms are given
Keywords :
insulated gate field effect transistors; optimisation; semiconductor device models; MOS transistor models; complex transistor models; efficient optimization; sample reduction; step length; trust-region-type optimization algorithm; Circuit simulation; Computational modeling; Design optimization; Equations; Jacobian matrices; MOSFETs; Mathematical model; Optimization methods; Pulp and paper industry; Temperature;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.111918
