Title :
0.5 /spl mu/m AlGaAs/GaAs HMESFET technology for digital VLSI products
Author :
Tsen, T. ; Tiku, S. ; Chun, J. ; Walton, E. ; Bhasker, C. ; Penney, J. ; Tang, R. ; Schneider, K. ; Campise, M.
Author_Institution :
Rockwell Int. Corp., Newbury Park, CA, USA
Abstract :
A 0.5 /spl mu/m AlGaAs/GaAs HMESFET technology has been developed and used to fabricate several high speed, high density circuits, such as a 2.5 ns 16 K static RAM and 1 GHz gate array and standard cell circuits. A family of channel-less DCFL/SBFL gate arrays with raw gate count ranging from 10 K to 100 K for commercial and military applications are currently in production.<>
Keywords :
III-V semiconductors; MESFET integrated circuits; SRAM chips; aluminium compounds; application specific integrated circuits; cellular arrays; direct coupled FET logic; field effect logic circuits; field effect memory circuits; gallium arsenide; integrated circuit interconnections; integrated circuit packaging; logic arrays; very high speed integrated circuits; 0.5 micron; 1 GHz; 2.5 ns; AlGaAs-GaAs; DCFL; III-V semiconductor; SBFL; ceramic leaded chip carrier; digital VLSI products; gate array; heterojunction MESFET; high density; high speed; standard cell; static RAM; super-buffered FET logic; Circuits; Dielectric constant; Dielectrics and electrical insulation; Gallium arsenide; Polyimides; Random access memory; Read-write memory; Switches; Very large scale integration; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394471
