Title :
A new frequency domain physical device simulation technique
Author :
Xuan, Yongnan ; Snowden, Christopher M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Leeds Univ., UK
Abstract :
A frequency-domain semiconductor device simulation technique is developed and described. The technique is based on the frequency-domain semiconductor charge transport equations and boundary conditions derived rigorously from those in the time domain, which is used in an accurate physical MESFET model. Emphasis is placed on the stringent transformation of the nonlinearities described in the original device equations, in order for the new model to be capable of accurately simulating the large-signal operation of the device. The frequency-domain modeling is very fast, compared with its counterpart in the time domain. This technique is used to simulate the operation of GaAs MESFETs. Very good correlations are obtained between the simulated results and those derived from corresponding time-domain simulations
Keywords :
Schottky gate field effect transistors; frequency-domain analysis; semiconductor device models; GaAs; boundary conditions; frequency domain physical device simulation technique; large-signal operation; physical MESFET model; semiconductor charge transport equations; semiconductor device; stringent transformation; time-domain simulations; Circuit simulation; Computational modeling; Current density; Frequency domain analysis; Gallium arsenide; MESFETs; Microwave devices; Nonlinear equations; Semiconductor devices; Solid state circuits;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.111921
