Effect of insulated shallow extension for the improved short-channel effect of sub-100 nm MOSFET

Author

Shih, Chun-Hsing ; Chen, Yi-Min ; Lien, Chenhsin

Author_Institution

Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

158

Lastpage

159

Abstract

This article presents an analytical short-channel effect model without any fitting parameter for the MOSFET with insulated shallow extension (ISE). The effect of ISE structure for the highly improved short-channel effect of sub-100 nm MOSFET is demonstrated in this model. Both sidewall-oxide thickness (T_side) and shallow-extension depth (X_e) play the major roles in containing the short-channel effect. The short-channel threshold-voltage equation is derived from the knowledge of the channel potential. The channel potential is obtained by the scale-length approach to solve 2D Poisson´s equation. Excellent agreements between the numerical simulated results and this model are obtained.

Keywords

MOSFET; Poisson equation; semiconductor device models; 100 nm; 2D Poisson equation; MOSFET; analytical short channel effect model; channel potential; insulated shallow extension structure; shallow extension depth; short channel threshold voltage equation; sidewall oxide thickness; Analytical models; Boundary conditions; Dielectric devices; Dielectric substrates; Dielectrics and electrical insulation; MOSFET circuits; Numerical simulation; Poisson equations; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272041

Filename

1272041