Title :
Transit times of SiGe:C HBTs using non selective base epitaxy
Abstract :
The transit times of SiGe:C HBTs using a non selective base epitaxy are investigated at 300 K and low temperature. The transit times depending on base boron dose and activation anneal conditions are investigated. Because the current gain strongly increases at low temperature, we can analyze dynamic performances versus temperature. We separate every charging and transit times over the temperature, in order to provide a better understanding of the 300 K behavior and to open up the road to further frequency optimization.
Keywords :
Ge-Si alloys; annealing; boron; carbon; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor materials; 300 K; SiGe:C; SiGe:C HBTs; activation annealing; boron dose; current gain; frequency optimization; nonselective base epitaxy; transit times; Boron; Capacitance; Epitaxial growth; Frequency; Heterojunction bipolar transistors; Kirk field collapse effect; Performance gain; Rapid thermal annealing; Temperature; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272044
