BSIM3v3 parameter extraction and design of VCO using SiGe hetero-CMOS

Author

Islam, Syed S. ; Anwa, A. F M

Author_Institution

Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

168

Lastpage

169

Abstract

The first BSIM3v3 model of SiGe heterojunction complementary metal-oxide-semiconductor (HCMOS) field effect transistors is proposed. The BSIM3v3 model parameters are extracted from experimental data. The model is implemented in Cadence Affirma Analog Circuit Design Environment to facilitate the design of SiGe HCMOS based analog/RF circuits. The calculated average power dissipation in SiGe based single ended VCO was 0.41 mW at 24 GHz while that of CMOS based VCO was 4.8 mW at 6 GHz.

Keywords

CMOS analogue integrated circuits; Ge-Si alloys; integrated circuit design; integrated circuit modelling; radiofrequency integrated circuits; semiconductor materials; voltage-controlled oscillators; 0.41 mW; 24 GHz; 4.8 mW; 6 GHz; BSIM3v3 model; Cadence Affirma analog circuit design; RF circuits; SiGe; SiGe HCMOS based analog/RF circuits; SiGe hetero-CMOS; field effect transistors; parameter extraction; power dissipation; Analog circuits; Data mining; FETs; Germanium silicon alloys; Heterojunctions; Parameter extraction; Radio frequency; Semiconductor device modeling; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272045

Filename

1272045