Title :
A 3.6 gigasample/s 5 bit analog to digital converter using 0.3 /spl mu/m AlGaAs-HEMT technology
Author :
Oehler, F. ; Sauerer, J. ; Hagelauer, R. ; Seitzer, D. ; Nowotny, U. ; Raynor, B. ; Schneider, J.
Author_Institution :
Fraunhofer Inst. for Integrated Circuits, Erlangen, Germany
Abstract :
A 0.3 /spl mu/m AlGaAs-HEMT technology was used to develop a high speed analog to digital converter (ADC). The 5-b converter based on a parallel architecture, operates up to a 3.6 GHz sampling rate. Excellent dynamic performance was achieved by an optimized comparator design and careful layout of the signal and clock lines. Each comparator is preceeded by a preamplifier to enhance its sensitivity and to minimize clock kickback. Using source follower buffers at the input, a very linear input capacitance was achieved. Thus the ADC´s overall input capacitance is voltage independent.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; analogue-digital conversion; gallium arsenide; 0.3 micron; 3.6 GHz; 5 bit; AlGaAs; HEMT; III-V semiconductor; analog to digital converter; dynamic performance; high speed; linear input capacitance; optimized comparator design; parallel architecture; preamplifier; source follower buffers; successive approximation; Analog-digital conversion; Clocks; Etching; Gallium arsenide; HEMTs; Integrated circuit technology; Molecular beam epitaxial growth; Optical buffering; Preamplifiers; Sampling methods;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394478
