Title :
Electrical parameters in highly doped strained n-Si1-xGex epilayers grown on Si substrates
Author :
Tsamakis, D. ; Sargentis, C. ; Kuznetsov, A.Y. ; Lampakis, D.
Author_Institution :
Dept. of Eletr. & Comput. Eng., Athens Nat. Tech. Univ., Greece
Abstract :
In this paper, we report the electrical resistivity (ρ) and Hall coefficient measurements (RH), of two strained n-Si1-xGex/Si heterostructure samples in the temperature range 80-350 K. The thickness of the epilayers were 1 and 0.2 μm while the nominal P doping levels were 6×1017 and 5×1018 cm-3 for x=0.05 and 0.22 respectively. The Si substrate resistivity was 18 Ωcm, two orders of magnitude higher than those of the epilayers. Phonon Raman spectra were also obtained at temperatures 79 and 300 K in order to have a direct information about the strain in SiGe epilayers as well as the strain induced conduction band discontinuity ΔEc.
Keywords :
Ge-Si alloys; Hall mobility; Raman spectra; conduction bands; effective mass; electrical resistivity; electron density; phonon spectra; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor materials; 0.2 micron; 1 micron; 18 ohmcm; 79 K; 80 to 350 K; Hall coefficient measurement; P doping levels; Si; Si substrate resistivity; SiGe; electrical resistivity; n-Si1-xGex epilayers; n-Si1-xGex/Si heterostructure; phonon Raman spectra; strain induced conduction band discontinuity; Capacitive sensors; Conductivity; Doping; Electric resistance; Electric variables measurement; Germanium silicon alloys; Phonons; Silicon germanium; Temperature distribution; Thickness measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272046
