Title :
Fully functional high speed 4-bit A/D converters using InAlAs/InGaAs HBTs
Author :
Tran, L. ; Southwell, S. ; Velebir, J. ; Oki, A. ; Streit, D. ; Oyama, B.
Author_Institution :
TRW Electron. & Techol. Div., Redondo Beach, CA, USA
Abstract :
Four-bit flash analog-to-digital converters have been built with InAlAs/InGaAs heterojunction bipolar transistors (HBTs). The circuit has a total of 1138 transistors which is believed to be the highest level of integration to date for an InP-based HBT circuit. Full functionality is observed at an input frequency of 1.0 GHz and a clock frequency of 2.4 GHz. Total power dissipation for this chip is 970 mW which is a factor of three lower than a similar chip built with AlGaAs/GaAs HBTs.<>
Keywords :
III-V semiconductors; aluminium compounds; analogue-digital conversion; bipolar integrated circuits; gallium arsenide; indium compounds; 1 GHz; 2.4 GHz; 4 bit; 970 mW; HBTs; III-V semiconductor; InAlAs-InGaAs; effective bits; flash analog-to-digital converters; functionality; high speed; power dissipation; Circuits; Etching; Gallium arsenide; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Silicon; Substrates; Thermal conductivity;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394479
