DocumentCode :
2616134
Title :
Optimization of the cutoff frequency for Si1-xGex HBTs
Author :
Ai, Lei ; Cheng, Ming C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
172
Lastpage :
173
Abstract :
In this paper, we derive an analytical expression for the total delay time τtot in Si1-xGexHBTs and based on the expression, the influences of the Ge composition profile XGe(y) in the base on total delay time τtot is examined for optimization of cutoff frequency fT. Total delay times are varied by varying doping profiles and Ge composition. Trapezoid-like base Ge composition profile and total delay time for the Si1-xGex HBT were studied.
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SiGe; cutoff frequency; doping profiles; heterojunction bipolar transistor; optimization; total delay time; trapezoid like base Ge composition profile; Capacitance; Cutoff frequency; Delay effects; Displays; Doping profiles; Equations; Heterojunction bipolar transistors; Predictive models; Shape; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272047
Filename :
1272047
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2616134
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