Heating in multi-emitter SiGe HBTs

Author

McAlister, S.P. ; McKinnon, W.R. ; Kovacic, S. ; Lafontaine, H.

Author_Institution

Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

174

Lastpage

175

Abstract

Bipolar transistors with multiple emitters are used to achieve high currents and the maximum utilization of emitter area. The multi-emitter SiGe HBTs fabricated in a modified Si BiCMOS technology is studied in this paper. The heating and thermal coupling between the emitters of a multiple emitter SiGe HBT were measured along the emitter length. This measurement provides useful information about the temperature increases in multi-emitter devices and the emitter-emitter thermal coupling. Temperature dependence of the normalized emitter currents and power dependence of the monitored emitter currents were studied through experiments.

Keywords

Ge-Si alloys; current density; heterojunction bipolar transistors; semiconductor materials; thermal analysis; Si BiCMOS technology; SiGe; current densities; emitter currents; emitter length; emitter-emitter thermal coupling; multiemitter SiGe HBT; power dependence; temperature dependence; Current density; Germanium silicon alloys; Heating; Heterojunction bipolar transistors; Implants; Silicon carbide; Silicon germanium; Temperature dependence; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272048

Filename

1272048